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Commit aa303aa9 authored by cnlohr's avatar cnlohr
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Update lib

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(footprint "DFN-3L-1x0.6" (version 20211014) (generator pcbnew)
(layer "F.Cu")
(tedit 0)
(attr smd)
(fp_text reference "REF**" (at 0 -1 unlocked) (layer "F.SilkS")
(effects (font (size 0.6 0.6) (thickness 0.1)))
(tstamp beda9fa6-bd8c-425d-832c-667ae614ce30)
)
(fp_text value "DFN-3L-1x0.6" (at 0 1.1 unlocked) (layer "F.Fab")
(effects (font (size 0.6 0.6) (thickness 0.1)))
(tstamp 868257e1-4ebc-4d1e-92cf-3a9ff250c2d7)
)
(fp_line (start 0.65 -0.2) (end 0.65 0.45) (layer "F.SilkS") (width 0.12) (tstamp 01496750-3129-43cd-9c35-c6ebebdf685d))
(fp_line (start -0.65 -0.45) (end 0.4 -0.45) (layer "F.SilkS") (width 0.12) (tstamp 4de91adb-2baf-45fa-99df-8c81b154bba7))
(fp_line (start 0.65 0.45) (end -0.65 0.45) (layer "F.SilkS") (width 0.12) (tstamp 77c08592-9c2a-4e53-a94a-6c7984bc5402))
(fp_line (start -0.65 0.45) (end -0.65 -0.45) (layer "F.SilkS") (width 0.12) (tstamp 96c735f7-2931-459e-973e-357633e6be99))
(fp_line (start -0.6 0.4) (end -0.6 -0.4) (layer "F.Fab") (width 0.1) (tstamp 622754be-8ccc-44a8-a4ee-fea65eebe728))
(fp_line (start -0.6 -0.4) (end 0.6 -0.4) (layer "F.Fab") (width 0.1) (tstamp a4837a31-d644-4f12-9485-15b28ea1d325))
(fp_line (start 0.6 0.4) (end -0.6 0.4) (layer "F.Fab") (width 0.1) (tstamp b59c968a-66c3-4273-9faf-cc3ef7ce470f))
(fp_line (start 0.6 -0.4) (end 0.6 0.4) (layer "F.Fab") (width 0.1) (tstamp e93ffed1-25e5-460b-9055-41ca2643ff78))
(pad "1" smd roundrect (at 0.35 -0.225) (size 0.45 0.25) (layers "F.Cu" "F.Paste" "F.Mask") (roundrect_rratio 0.1) (tstamp 5bea2f45-d236-45fb-a8e4-5d580078f54b))
(pad "2" smd roundrect (at 0.35 0.225) (size 0.45 0.25) (layers "F.Cu" "F.Paste" "F.Mask") (roundrect_rratio 0.1) (tstamp bdc1d978-5f34-491a-8386-503d4881b156))
(pad "3" smd roundrect (at -0.35 0) (size 0.45 0.7) (layers "F.Cu" "F.Paste" "F.Mask") (roundrect_rratio 0.1) (tstamp 02ff2a8b-7c53-4f78-9be3-154fd5339cdb))
)
.SUBCKT PNM3FD20V1E-MOSFET-N-DFN-3L-POWER 10 20 30
* THIS IS UST A STAB IN THE DARK! Based off DMG2302UK model.
* TERMINALS: D G S
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.02745
RS 30 3 0.001
RG 20 2 2.64
CGS 2 3 1E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.55E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.6118
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.46 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 7.358E-011 VJ = 0.7999 M = 0.6
.MODEL DSUB D IS = 4.844E-007 N = 1.983 RS = 0.05975 BV = 20 CJO = 8E-011 VJ = 0.6 M = 0.7957
.MODEL DLIM D IS = 0.0001
.ENDS
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